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SMT850-23 High Performance Infrared TOP LED with lens
SMT850-23 consists of an AlGaAs LED mounted on the lead
It emits a spectral band of radiation at 850nm.
◆Specifications
1)Product name TOP IR LED
2)Type No. SMT850-23
3)Chip
(1)Chip Material AlGaAs
(2)Chip Dimension 400um*400nm
(3)Peak Wavelength 850nm typ.
4)Package
(1)Lead
(2)Package Resin PPA Resin
(3)Lens Epoxy Resin
(4)Diameter Φ2.6mm
Absolute Maximum Ratings
|
Item |
Symblol |
Maximum RateValue |
Unit |
Ambient Temperature |
|
Power Dissipation |
PD |
160 |
mW |
Ta=25℃ |
|
Forward Current |
IF |
100 |
mA |
Ta=25℃ |
|
Pulse Forward Current |
IFP |
1,000 |
mA |
Ta=25℃ |
|
Reverse Voltage |
VR |
5 |
V |
Ta=25℃ |
|
Junction Temperature |
TJ |
100 |
℃ |
|
|
Thermal Resistance |
Rthjp |
190 |
K/W |
|
|
OperatingTemperature |
TOPR |
-30～+80 |
℃ |
|
|
Storage Temperature |
TSTG |
-30～+80 |
℃ |
|
|
SolderingTemperature |
TSOL |
255 |
℃ |
|
#Pulse Forward Current condition:Duty=1% and Pulse With=10us.
#Soldering condition: Soldering condition must be completed within 10 seconds at 255℃。
◆ Electro-Optical Characteristics[Ta=25℃]
|
Item |
Symbol |
Condition |
Minimum |
Typical |
Maximum |
Unit |
|
Forward Voltage |
VF |
IF=50mA DC |
|
1.45 |
1.6 |
V |
|
IF=100mA, tp=20ms |
|
1.5 |
1.8 |
|||
|
Reverse Current |
IR |
VR=5V |
|
|
10 |
uA |
|
Total Radiated Power |
PO |
IF=50mA DC |
16 |
22 |
|
mW |
|
IF=100mA, tp=20ms |
|
44 |
|
|||
|
Radiant Intensity |
IE |
IF=50mA DC |
|
40 |
|
mW/sr |
|
IF=100mA, tp=20ms |
|
80 |
|
|||
|
Peak Wavelength |
λp |
IF=50mA DC |
835 |
850 |
865 |
nm |
|
Half Width |
△λ |
IF=50mA DC |
|
40 |
|
nm |
|
Viewing Half Angle |
θ1/2 |
IF=50mA DC |
|
±15 |
|
deg. |
|
Rise Time |
tr |
IF=50mA DC |
|
15 |
|
ns |
|
Fall Time |
tf |
IF=50mA DC |
|
10 |
|
ns |
